In situ monitoring of resistivity and carrier concentration during molecular beam epitaxy of topological insulator Bi2Se3
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Changxi Zheng | Jian-Hao Chen | Dohun Kim | Jack Hellerstedt | William G. Cullen | Michael S. Fuhrer | M. Fuhrer | W. Cullen | C. Zheng | Dohun Kim | J. Chen | J. Hellerstedt | C. Zheng | Jianhao Chen | Jack Hellerstedt
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