Scale-up issues of CIGS thin film PV modules

Abstract Photovoltaics cost has been declining following a 70% learning curve. Now the challenge is to bring down the cost of solar electricity to make it competitive with conventional sources within the next decade. In the long run, the module efficiencies tend to reach 80% of the champion cell efficiencies. Using a semiempirical methodology, it has been shown earlier that while the triple junction a-Si:H thin film technology is competitive, CIGS and CdTe thin film module technologies are highly competitive and presently offer the best approach for significantly exceeding the cost/performance levels of standard and non-standard crystalline Si PV technologies. Since 2006, the production of thin film solar cell in the U.S. has surpassed that of c-Si. At present, the production of CIGS PV modules lags considerably behind that of CdTe PV modules. This is mainly because of its complexity. Scale-up issues related to various CIGS preparation technologies such as co-evaporation, metallic precursor deposition by magnetron sputtering and non-vacuum techniques such as ink-jet printing, electroplating or doctor-blade technology followed by their selenization/sulfurization are discussed so as to assist the CIGS technology to attain its full potential. Besides the welcome announcements of large volume production, it is essential to achieve the production cost below $1/Wp in the near term and attain production speeds comparable to CdTe production speeds. Comparable production speeds are expected to be achieved within the next decade. This will enable reduction of CIGS module production costs to ∼65¢/Wp that would be comparable to the CdTe module projected production cost. Additionally CIGS will have a higher efficiency premium.

[1]  Uwe Rau,et al.  Electronic properties of Cu(In,Ga)Se2 heterojunction solar cells–recent achievements, current understanding, and future challenges , 1999 .

[2]  T. Aramoto,et al.  Interface control to enhance the fill factor over 0.70 in a large-area CIS-based thin-film PV technology , 2009 .

[3]  Stephen Glynn,et al.  Required material properties for high-efficiency CIGS modules , 2009, Optics + Photonics for Sustainable Energy.

[4]  W. Shafarman,et al.  Direct current-voltage measurements of the Mo/CuInSe/sub 2/ contact on operating solar cells , 1996, Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.

[5]  Rommel Noufi,et al.  Characterization of Cu(In,Ga)Se2 materials used in record performance solar cells , 2006 .

[6]  I. Repins,et al.  19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor , 2008 .

[7]  J. Szczyrbowski,et al.  New low emissivity coating based on TwinMag® sputtered TiO2 and Si3N4 layers , 1999 .

[8]  N. Dhere,et al.  Polycrystalline CuIn/sub 1-x/Ga/sub x/Se/sub 2/ thin film PV solar cells prepared by two-stage selenization process using Se vapor , 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

[9]  S. Nishiwaki,et al.  Characterization of the Cu(In,Ga)Se2/Mo interface in CIGS solar cells , 2001 .

[10]  E. Lotter,et al.  Pilot line production of CIGS modules: first experiences in processing and further developments , 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002..