Preparation and Evaluation of Graphite Oxide Reduced at 220 °C

The reduction of graphite oxide (GO) thin films was evaluated at 220 °C using a combination of infrared (FTIR) and X-ray photoemission spectroscopies (XPS). The results were correlated with electrical resistance measurements. The chemical composition of GO was C8(OH)3O0.8 and reduced to C8(OH)0.5O0.3 after nearly 24 h of low-temperature processing, defined as 220 °C. The sheet resistance of dropcast GO thin films processed at 220 °C in air was 8 kΩ sq−1, similar to GO reduced at >800 °C in an inert atmosphere.