Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser

Polarization-resolved amplified spontaneous emission (ASE) and gain from tensile-strained multiple quantum wells (QWs) coupled to a single layer of compressively strained quantum dots (QDs) show interesting output characteristics. Low current injection reveals transverse electric polarized ASE from the QD ground state and QD-coupled-QW state. Additionally, transverse magnetic ASE from the QW state is observed. The modal gain of this laser shows coupled active state activation which is evident by spectral narrowing and change from QW-like to QD-like spectrum.

[1]  R. D. Heller,et al.  Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells , 2004 .

[2]  T. Chung,et al.  Coupled-stripe quantum-well-assisted AlGaAs–GaAs–InGaAs–InAs quantum-dot laser , 2002 .

[3]  P. Bhattacharya,et al.  Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature , 2002 .

[4]  P. Smowton,et al.  Effect of tensile strain/well-width combination on the measured gain-radiative current characteristics of 635 nm laser diodes , 2003 .

[5]  Russell D. Dupuis,et al.  Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures , 2001 .

[6]  P. Smowton,et al.  Measurement of transverse electric and transverse magnetic spontaneous emission and gain in tensile strained GaInP laser diodes , 2002 .

[7]  P. K. Kondratko,et al.  Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser , 2003 .

[8]  Masaaki Yuri,et al.  Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure , 1999 .

[9]  Peter Blood,et al.  Strain dependence of threshold current in fixed-wavelength GaInP laser diodes , 1995 .

[10]  Comment on “Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature” [Appl. Phys. Lett. 80, 3482 (2002)] , 2002 .

[11]  Russell D. Dupuis,et al.  Properties of InP self-assembled quantum dots embedded in In0.49(AlxGa1−x)0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition , 2002 .

[12]  P. Bhattacharya,et al.  Response to ''Comment on 'Tunnel injection In 0.4 Ga 0.6 As'GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature' '' ÜAppl. Phys. Lett. 81, 2659 Ñ2002Öá , 2002 .