Simulation-based parameter extraction, its implementation and some applications

An interactive program for the extraction of transistor parameters has been developed using a SPICE-like circuit simulator instead of an explicit set of model equations. Consequently, many simulation capabilities (i.e. a variety of elements and their models, analyses and simulation modes) are available at the extractor level. Several optimisation methods are integrated into the program to provide robust as well as efficient fitting of device characteristics. Analysis of heterojunction bipolar transistor self-heating effects is presented in greater detail as an example application. >