Medium Energy Ion Scattering Studies of Silicon Oxidation and Oxynitridation

The paper reviews some of our recent high resolution medium energy ion scattering (MEIS) experiments on mechanistic and structural aspects of ultrathin (<5 nm) dielectric films (oxides, SiO2, and oxynitrides, SiO.NY) thermally grown on silicon surfaces. The growth mechanism of ultrathin films O using isotopic (16O2/ 18O2) labeling methods, the transition region near the oxide/substrate interface, and silicon oxynitridation in N2O and NO are discussed.

[1]  Eric Garfunkel,et al.  An isotopic labeling study of the growth of thin oxide films on Si(100) , 1995 .

[2]  T. Nakao,et al.  Effects of surface oxide on the rapid thermal nitridation of Si(001) , 1996 .

[3]  Israel Jacob Rabin Baumvol,et al.  Dry oxidation mechanisms of thin dielectric films formed under N2O using isotopic tracing methods , 1996 .

[4]  Frank Herman,et al.  ELECTRONIC STRUCTURE OF SEMICONDUCTOR INTERFACES , 1984 .

[5]  Leonard C. Feldman,et al.  Materials analysis by ion channeling , 1982 .

[6]  E. Irene.  Models for the oxidation of silicon , 1988 .

[7]  Leonard C. Feldman,et al.  Nitrogen content of oxynitride films on Si(100) , 1994 .

[8]  E. P. Gusev,et al.  On the Mechanism of Ultra Thin Silicon Oxide Film Growth During Thermal Oxidation , 1993 .

[9]  Mark C. Reuter,et al.  A new two-dimensional particle detector for a toroidal electrostatic analyzer , 1991 .

[10]  Israel Jacob Rabin Baumvol,et al.  Nitrogen transport during rapid thermal growth of silicon oxynitride films in N2O , 1996 .

[11]  James D. Plummer,et al.  Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime II . Physical Mechanisms , 1985 .

[12]  Robert A. Buhrman,et al.  N depth profiles in thin SiO2 grown or processed in N2O: The role of atomic oxygen , 1995 .

[13]  E. P. Gusev,et al.  Silicon Oxidation and Oxynitridation in the Ultrathin Regime: Ion Scattering Studies , 1997 .

[14]  C. R. Helms,et al.  Parallel oxidation model for Si including both molecular and atomic oxygen mechanisms , 1989 .

[15]  Sergio A. Ajuria,et al.  Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO) , 1994 .

[16]  J. V. D. Veen.  Ion beam crystallography of surfaces and interfaces , 1985 .

[17]  Philip J. Tobin,et al.  A Model for the Gas-Phase Chemistry Occurring in a Furnace N2O Oxynitride Process , 1996 .

[18]  A. S. Grove,et al.  General Relationship for the Thermal Oxidation of Silicon , 1965 .

[19]  H. B. Harrison,et al.  Modeling the growth of thin silicon oxide films on silicon , 1996 .

[20]  C. W. Magee,et al.  Characterization of nitrided SiO2 thin films using secondary ion mass spectrometry , 1996 .

[21]  C. R. Helms,et al.  The silicon-silicon dioxide system: Its microstructure and imperfections , 1994 .

[22]  Robert A. Buhrman,et al.  Role of interfacial nitrogen in improving thin silicon oxides grown in N2O , 1993 .

[23]  S. I. Raider,et al.  Nitrogen reaction at a silicon–silicon dioxide interface , 1975 .

[24]  A M Stoneham,et al.  Oxidation of silicon: the VLSI gate dielectric , 1995 .

[25]  Daniel M. Fleetwood,et al.  Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides , 1996 .

[26]  J. V. D. Veen,et al.  Ion beam crystallography of silicon surfaces III. Si(111)-(7 × 7) , 1985 .

[27]  Eric Garfunkel,et al.  An ion scattering study of the interaction of oxygen with Si(111): surface roughening and oxide growth , 1996 .

[28]  F. Himpsel.  Electronic structure of semiconductor surfaces and interfaces , 1994 .

[29]  L. Feldman,et al.  Atomic structure at the (111) Si‐SiO2 interface , 1982 .

[30]  Michel Froment,et al.  The thermal oxidation of silicon the special case of the growth of very thin films , 1986 .

[31]  C. R. Helms,et al.  The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 , 1988 .

[32]  D. Wristers,et al.  Effects of chemical composition on the electrical properties of NO‐nitrided SiO2 , 1995 .

[33]  E. Gusev,et al.  STRUCTURAL STUDIES OF OXIDE SURFACES , 1996 .

[34]  Leonard C. Feldman,et al.  High resolution ion scattering study of silicon oxynitridation , 1996 .

[35]  F. Mcfeely,et al.  An inquiry concerning the principles of Si 2p core‐level photoemission shift assignments at the Si/SiO2 interface , 1996 .

[36]  Martin L. Green,et al.  The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide , 1997 .

[37]  C. R. Helms,et al.  18O Tracer Study of Si Oxidation in Dry O 2 Using SIMS , 1988 .

[38]  Leonard C. Feldman,et al.  Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness , 1994 .

[39]  E. P. Gusev,et al.  Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides , 1997 .

[40]  N. Newman,et al.  p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg , 1994 .

[41]  Bruce E. Deal,et al.  Historical Perspectives of Silicon Oxidation , 1988 .

[42]  I. Trimaille,et al.  Use of 18O isotopic labelling to study thermal dry oxidation of silicon as a function of temperature and pressure , 1989 .

[43]  R. Tromp,et al.  Angle resolved detection of charged particles with a novel type toroidal electrostatic analyser , 1982 .

[44]  Veena Misra,et al.  Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs , 1996 .

[45]  van der Veen JF,et al.  Monolayer resolution in medium-energy ion-scattering experiments on the NiSi2(111) surface. , 1991, Physical review letters.

[46]  E. P. Gusev,et al.  The initial oxidation of silicon: new ion scattering results in the ultra-thin regime , 1996 .

[47]  G. Lucovsky,et al.  Controlled nitrogen incorporation at the gate oxide surface , 1995 .

[48]  P. Batson,et al.  Simultaneous STEM imaging and electron energy-loss spectroscopy with atomic-column sensitivity , 1993, Nature.

[49]  Nelson S. Saks,et al.  Nitrogen depletion during oxidation in N2O , 1995 .

[50]  T. Hattori.  Chemical Structures of the SiO2Si Interface , 1995 .

[51]  Gusev,et al.  Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering. , 1995, Physical review. B, Condensed matter.

[52]  James D. Plummer,et al.  Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results , 1985 .

[53]  D. Brasen,et al.  Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100) , 1997 .

[54]  Robert A. Buhrman,et al.  Furnace gas‐phase chemistry of silicon oxynitridation in N2O , 1996 .

[55]  F. Habraken,et al.  Silicon nitride and oxynitride films , 1994 .