论文信息 - A charge pump without overstress for standard cmos process with improved current driver capability

A charge pump without overstress for standard cmos process with improved current driver capability

Many charge pump structures that overcome gate-oxide overstress have been proposed in the last few years. Though they differ in the number of phases and in efficiency, they have almost the same current driver capability. A new charge pump without gate-oxide overstress, with a better current driver capability is proposed here. The new circuit is derived from a two-phase charge pump in order to inherit its efficiency. A four-stage structure of the proposed circuit has shown a driver current capability 40% better than the previous solutions. The proposed circuit is also faster than the previous charge pumps that overcome gate-oxide overstress.

C. Cruz | C. Filho | J. Lima

[1] J. F. Dickson,et al. On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique , 1976 .

[2] V.R. Mognon,et al. A charge pump circuit without gate-oxide overstress for standard CMOS technology and suitable for low-power applications , 2008, 2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel.

[3] T. Yoshihara,et al. A Charge Pump Circuit Without Overstress in Low-Voltage CMOS Standard Process , 2007, 2007 IEEE Conference on Electron Devices and Solid-State Circuits.

[4] J.-M. Daga,et al. A PMOS-switch based charge pump, allowing lost cost implementation on a CMOS standard process , 2005, Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005..

[5] A. Cabrini,et al. Enhanced charge pump for ultra-low-voltage applications , 2006 .

[6] Ming-Dou Ker,et al. Design of charge pump circuit with consideration of gate-oxide reliability in low-voltage CMOS processes , 2006, IEEE J. Solid State Circuits.