论文信息 - Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation - 字舞流文

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

H. Tsuchida | I. Kamata | T. Kozawa | Masahiko Ito | S. Yamauchi | Hideki Ito | H. Fujibayashi | K. Hara | Masayoshi Yajima | Shin-ichi Mitani | Hirofumi Aoki | K. Nishikawa | Masami Naitou | Katsumi Suzuki | Kunihiko Suzuki