论文信息 - Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor - 字舞流文

Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor

A new three‐terminal resonant tunneling structure in which current transport is controlled by directly modulating the potential of the quantum well is proposed and demonstrated. Typical current gains of 50 at room temperature are observed.

Mark A. Reed | John N. Randall | William R. Frensley | Alan Seabaugh | Richard J. Matyi | M. Reed | A. Seabaugh | W. Frensley | J. Randall | R. Matyi

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