Correlation between trap characterisation by low frequency noise, mutual conductance dispersion, oscillations and DLTS in GaAs MESFETs

Abstract The characteristics of traps observed by excess generation-recombination (g-r) noise spectroscopy, g M -frequency dispersion spectroscopy and low frequency oscillations are correlated with the properties observed by different versions of DLTS experiments applied to GaAs MESFETs. A comparison of the trap parameters reveals the relative sensitivities of the techniques and any systematic differences. The DLTS experiments have located the positions of the traps so that the bias dependence of the trap parameters for each technique should allow any unknown trap also to be located within the device structure.