论文信息 - Statistical BSIM model for MOSFET 1/f noise

Statistical BSIM model for MOSFET 1/f noise

A statistical model for MOSFET 1/f noise implemented as an extension to BSIM and integrated into a process design kit is presented. Excellent model to hardware correlation is shown on measured noise statistics from over 200 devices. The statistical model enables circuit designers to run Monte Carlo and corner noise simulations, and captures the device area and bias dependence of noise variance.

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