Carbon-related Deep States in Compensated n-type and Semi-Insulating GaN:C and their Influence on Yellow Luminescence

The physical origin of the yellow luminescence in MBE-grown GaN co-doped with C and Si was investigated. Deep level optical spectroscopy (DLOS), deep level transient spectroscopy (DLTS), and photoluminescence (PL) were used to study the deep level spectrum as a function of C incorporation. In the absence of C co-doping, samples were n -type and demonstrated a weak yellow luminescence band, likely related to V Ga . For increasing C co-doping, samples became semi-insulating concurrent with increased intensity of the yellow luminescence and the concentration of C-related deep acceptors. The DLOS results were used to develop a configuration-coordinate model for a C-related deep level with optical ionization energy of 3.0 eV and Franck-Condon shift of 0.4 eV that is consistent with the observed yellow luminescence and DLTS results. From these findings, a general model for independent mechanisms of the yellow luminescence related to V Ga for n -type GaN and C for n -type and semi-insulating GaN:C:Si is discussed.

[1]  U. Mishra,et al.  Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy , 2004 .

[2]  Steven A. Ringel,et al.  Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition , 2004 .

[3]  Qing Yang,et al.  Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN , 2003 .

[4]  Chennupati Jagadish,et al.  Chemical origin of the yellow luminescence in GaN , 2002 .

[5]  Steven A. Ringel,et al.  Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy , 2002 .

[6]  J. B. Webb,et al.  Properties of carbon-doped GaN , 2001 .

[7]  Rong Zhang,et al.  Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy , 1998 .

[8]  Chris G. Van de Walle,et al.  INTERACTIONS OF HYDROGEN WITH NATIVE DEFECTS IN GAN , 1997 .

[9]  B. Meyer,et al.  Excited states of Fe 3+ sin GaN , 1997 .

[10]  José Luis Sánchez-Rojas,et al.  Yellow luminescence and related deep states in undoped GaN , 1997 .

[11]  W. Pletschen,et al.  Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers , 1995 .

[12]  Y. Shinozuka.  Two Bands Model for Nonradiative Multiphonon Recombination at Deep-Level Defects in Semiconductors , 1982 .

[13]  A. Chantre,et al.  Deep-level optical spectroscopy in GaAs , 1981 .

[14]  Toshio Ogino,et al.  Mechanism of Yellow Luminescence in GaN , 1980 .