Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide
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W. J. Choyke | E. Janzén | N. T. Son | B. Aradi | R. Devaty | P. Deák | E. Janzén
[1] W. J. Choyke,et al. Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC , 2001 .
[2] A. Ellison,et al. Presence of Hydrogen in SiC , 2001 .
[3] A. Hallén,et al. Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC , 2001 .
[4] Alexander Mattausch,et al. Boron in SiC: Structure and Kinetics , 2001 .
[5] N. T. Son,et al. Boron Centers in 4H-SiC , 2001 .
[6] W. Witthuhn,et al. Hydrogen passivation of silicon carbide by low-energy ion implantation , 1998 .
[7] W. J. Choyke,et al. Photoluminescence and transport studies of boron in 4H SiC , 1998 .
[8] D. J. Larkin. SiC Dopant Incorporation Control Using Site‐Competition CVD , 1997 .
[9] Philip G. Neudeck,et al. Site‐competition epitaxy for superior silicon carbide electronics , 1994 .
[10] R. C. Weast. Handbook of chemistry and physics , 1973 .