Influence of the annealing temperature and silicon concentration on the absorption and emission properties of Si nanocrystals

Silicon nanocrystals embedded in a silicon-rich silicon-oxide matrix have been fabricated at different silicon contents (38%, 40%, and 49%) using plasma-enhanced chemical vapor deposition and annealing at different temperatures in the range from 900 °C to 1100 °C. Their optical properties have been investigated by photoluminescence and transmittance measurements. Strong, room-temperature emission bands at ∼1.6 eV have been observed for all samples, with intensities dependent on the annealing temperature and Si content of the samples. From transmittance measurements, a redshift of the absorption edge has been detected when increasing the annealing temperature or Si content.

[1]  J. Misiewicz,et al.  Energy Transfer Between Nanocrystalline Host and Eu3 + Ions in GaN : Eu3 + Powders , 2007 .

[2]  J. Misiewicz,et al.  1.54 μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD , 2006 .

[3]  J. Misiewicz,et al.  Optical properties of GaN nanocrystals embedded into silica matrices , 2006 .

[4]  D. Kaczmarek,et al.  Microstructure and Optical Properties of TiO2 Thin Films Prepared by Low Pressure Hot Target Reactive Magnetron Sputtering , 2006 .

[5]  O. Zalloum,et al.  X-ray-diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides , 2006 .

[6]  P. Pellegrino,et al.  Size dependence of refractive index of Si nanoclusters embedded in SiO2 , 2005 .

[7]  Fabrice Gourbilleau,et al.  Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-μm emission , 2004 .

[8]  Minoru Fujii,et al.  Coexistence of two different energy transfer processes in SiO2 films containing Si nanocrystals and Er , 2004 .

[9]  C. Hsu,et al.  Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er , 2003 .

[10]  F. Priolo,et al.  Sensitizing properties of amorphous Si clusters on the 1.54-μm luminescence of Er in Si-rich SiO2 , 2003 .

[11]  Maria Miritello,et al.  Erbium-doped Si nanocrystals: optical properties and electroluminescent devices , 2003 .

[12]  Anthony J. Kenyon,et al.  Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms , 2002 .

[13]  Y. Niquet,et al.  Method for tight-binding parametrization: Application to silicon nanostructures , 2000 .

[14]  Kinetic oscillations of red photoluminescence from nanocrystalline Si/SiO2 films , 2000 .

[15]  Fabio Iacona,et al.  Correlation between luminescence and structural properties of Si nanocrystals , 2000 .

[16]  Tsutomu Shimizu-Iwayama,et al.  Mechanism of photoluminescence of Si nanocrystals in SiO2 fabricated by ion implantation: the role of interactions of nanocrystals and oxygen , 1999 .

[17]  Jess P. Wilcoxon,et al.  Tailorable, Visible Light Emission From Silicon Nanocrystals , 1999 .

[18]  Harry A. Atwater,et al.  Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation , 1998 .

[19]  Wolfgang Skorupa,et al.  Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating , 1997 .

[20]  A. K. Gutakovsky,et al.  VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION IMPLANTATION AND PULSE ANNEALING , 1997 .

[21]  A. Goswami.  Thin Film Fundamentals , 1996 .

[22]  Tsutomu Shimizu-Iwayama,et al.  Visible photoluminescence in Si+‐implanted thermal oxide films on crystalline Si , 1994 .

[23]  R. Friesner,et al.  Prediction of anomalous redshift in semiconductor clusters , 1992 .

[24]  L. Nesbit,et al.  Annealing characteristics of Si‐rich SiO2 films , 1985 .