High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
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[1] N. Ledentsov,et al. Low-threshold injection lasers based on vertically coupled quantum dots , 1997 .
[2] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .
[3] John E. Bowers,et al. Room temperature lasing from InGaAs quantum dots , 1996 .
[4] Hiroshi Ishikawa,et al. Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer , 1996 .
[5] Johann Peter Reithmaier,et al. High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers , 1998 .
[6] S. Denbaars,et al. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces , 1993 .
[7] C. Jagadish,et al. Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots , 1996 .
[8] A. Forchel,et al. Zeeman splitting of excitons and biexcitons in single In 0.60 Ga 0.40 As/GaAs self-assembled quantum dots , 1998 .
[9] M. Asada,et al. Gain and the threshold of three-dimensional quantum-box lasers , 1986 .
[10] Jamie D. Phillips,et al. Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers , 1996 .
[11] D. Deppe,et al. 1.3 μm room-temperature GaAs-based quantum-dot laser , 1998 .
[12] Dieter Bimberg,et al. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition , 1997 .
[13] Nikolai N. Ledentsov,et al. InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition , 1997 .
[14] Niloy K. Dutta,et al. Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate , 1991 .
[15] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .
[16] Mikhail V. Maximov,et al. High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser , 1998 .