As-soak control of the InAs-on-GaSb interface

Abstract We have investigated the effect of a brief As 2 -soak at the GaSb surface on the nature of the InAs-on-GaSb interface. We find that As 2 efficiently removes Sb from GaSb and that a controlled As 2 -soak may be a necessary step in forming a “GaAs-like” interface without structural or optical degradation. We observe that the thickness of the “GaAs-like” interfacial layer and the band-edge transition wavelength in InAs/GaSb superlattices both increase with increasing As 2 -soak duration.

[1]  G. Turner,et al.  Visualizing interfacial structure at non-common-atom heterojunctions with cross-sectional scanning tunneling microscopy. , 2000, Physical review letters.

[2]  D. Chow,et al.  High structural quality Ga1−xInxSb/InAs strained‐layer superlattices grown on GaSb substrates , 1992 .

[3]  Christopher L. Felix,et al.  High-temperature continuous-wave 3–6.1 μm “W” lasers with diamond-pressure-bond heat sinking , 1999 .

[4]  Frank Fuchs,et al.  Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy , 1995 .

[5]  S. Pei,et al.  Cross-sectional scanning tunneling microscopy characterization of molecular beam epitaxy grown InAs/GaSb/AlSb heterostructures for mid-infrared interband cascade lasers , 1998 .

[6]  Rui Q. Yang,et al.  High-efficiency interband cascade lasers with peak power exceeding 4 W/facet , 1999 .

[7]  Brian R. Bennett,et al.  Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures , 1999 .

[8]  Ron Kaspi,et al.  Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices , 2000 .

[9]  S. Pei,et al.  Microstructure of the GaSb-on-InAs heterojunction examined with cross-sectional scanning tunneling microscopy , 1998 .

[10]  Harper,et al.  Origin of antimony segregation in GaInSb/InAs strained-layer superlattices , 2000, Physical review letters.

[11]  Hooman Mohseni,et al.  Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range , 1997 .

[12]  D. A. Collins,et al.  X‐ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface , 1993 .

[13]  Christopher L. Felix,et al.  Optimum growth parameters for type-II infrared lasers , 1999 .