Design and experimental analysis of a 1 kW, 800 kHz all-SiC boost DC-DC converter

This paper presents the design, prototype development, operation and testing of a 1 kW, 800 V output all-SiC boost DC-DC converter using SiC MOSFET and SiC Shottky diode chips. The switching frequency is raised up to as high as 800 kHz and a 230 °C junction temperature has been reached by switching-loss dominant self-heating. High frequency switching characteristics of the proposed converter are evaluated in detail. Based on those evaluations, the Critical Conduction Mode (CrCM) Zero Voltage Switching (ZVS) soft-switched experiments are carried out on the same SiC module. The switching loss of SiC MOSFET is dramatically reduced, thus significantly improving the converter overall efficiency and relieving the high temperature stress induced on the switching devices. This work will provide useful information for the high frequency and high temperature applications of SiC devices.

[1]  Jason Henning,et al.  1700V 4H-SiC MOSFETs and Schottky diodes for next generation power conversion applications , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[2]  D. G. Lamar,et al.  An Insight into the Switching Process of Power MOSFETs: An Improved Analytical Losses Model , 2010, IEEE Transactions on Power Electronics.

[3]  Xueqian Zhong,et al.  High Temperature Stability and the Performance Degradation of SiC MOSFETs , 2014, IEEE Transactions on Power Electronics.

[4]  A. Agarwal,et al.  SiC power-switching devices-the second electronics revolution? , 2002, Proc. IEEE.

[5]  K. Acharya,et al.  Efficient, High-Temperature Bidirectional Dc/Dc Converter for Plug-in-Hybrid Electric Vehicle (PHEV) using SiC Devices , 2009, 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition.

[6]  Miaosen Shen,et al.  Simplified loss analysis for high speed SiC MOSFET inverter , 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[7]  M. Arias,et al.  Optimizing the efficiency of a dc-dc boost converter over 98% by using commercial SiC transistors with switching frequencies from 100 kHz to 1MHz , 2013, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[8]  A. Agarwal,et al.  Assessing the Impact of SiC MOSFETs on Converter Interfaces for Distributed Energy Resources , 2009, IEEE Transactions on Power Electronics.

[9]  Ming Xu,et al.  Design Considerations of Soft-Switched Buck PFC Converter With Constant On-Time (COT) Control , 2011, IEEE Transactions on Power Electronics.

[10]  M. Mino,et al.  High-density bidirectional rectifier for next generation 380-V DC distribution system , 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[11]  Jianjing Wang,et al.  Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance , 2013, IEEE Transactions on Power Electronics.

[12]  Kuang Sheng.  Maximum Junction Temperatures of SiC Power Devices , 2009, IEEE Transactions on Electron Devices.

[13]  Z.J. Shen,et al.  New Physical Insights on Power MOSFET Switching Losses , 2009, IEEE Transactions on Power Electronics.