Electric field enhanced emission from non‐Coulombic traps in semiconductors

Electric field enhancement of emission from three non‐Coulombic traps has been calculated: the shielded Coulombic potential, the polarization potential, and the dipole potential. Both the Poole‐Frenkel effect and phonon‐assisted tunneling have been included, and both were found to be important. The field effect can be used to distinguish between these potentials on the basis of their long range character. This effect is most important in interpreting the results of capacitance transient studies of deep levels.