Fast and Efficient Dynamic WDM Semiconductor

A novel state-variable model for semiconductor optical amplifiers (SOAs) that is amenable to block diagram implementation of wavelength division multiplexed (WDM) sig- nals and fast execution times is presented. The novel model is called the reservoir model, in analogy with similar block- oriented models for Raman and erbium-doped fiber amplifiers (EDFAs). A procedure is proposed to extract the needed reservoir model parameters from the parameters of a detailed and accurate space-resolved SOA model due to Connelly, which was extended to cope with the time-resolved gain transient analysis. Several variations of the reservoir model are considered with increasing complexity, which allow the accurate inclusion of scattering losses and gain saturation induced by amplified spontaneous emission. It is shown that at comparable accuracy, the reservoir model can be 20 times faster than the Connelly model in single-channel operation; much more significant time savings are expected for WDM operation. The model neglects intraband SOA phenomena and is thus limited to modulation rates per channel not exceeding 10 Gb/s. The SOA reservoir model provides a unique tool with reasonably short computation times for a reliable analysis of gain transients in WDM optical networks with complex topologies.

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