论文信息 - Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric - 字舞流文

Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric

V. Vasil’ev | A. Voitsekhovskii | S. Dzyadukh | M. Yakushev | V. Varavin | S. Dvoretskii | N. Mikhailov | Yu. G. Sidorov | S. Nesmelov