β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2
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Rong Zhang | Y. Hao | Q. Feng | Peijun Ma | Chunfu Zhang | Jincheng Zhang | Jing Ning | Jiandong Ye | Zhihong Liu | Hong Zhou | Shengrui Xu | H. Gong | Zhuangzhuang Hu | Qinglong Yan | Chenlu Wang