Influence of Ga precursor choice on ordering degree of MOVPE grown Ga0.5In0.5P

[1]  G. B. Stringfellow,et al.  Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers , 1997 .

[2]  G. B. Stringfellow,et al.  Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP , 1996 .

[3]  E. Jones,et al.  Microstructures of (In,Ga)P alloys grown on GaAs by metalorganic vapor‐phase epitaxy , 1995 .

[4]  L. J. Giling,et al.  Two-dimensional electron gases in low-pressure metalorganic vapour phase epitaxially grown InGaP homojunctions , 1994 .

[5]  L. J. Giling,et al.  Two‐dimensional electron gas in modulation‐doped, ordered‐disordered GaInP2 homojunctions , 1994 .

[6]  T. Seong,et al.  Mechanism for CuPt-type ordering in mixed III–V epitaxial layers , 1994 .

[7]  Driessen,et al.  Effects of confined donor states on the optical and transport properties of ordered GaInP2 alloys. , 1993, Physical review. B, Condensed matter.

[8]  A. C. Jones.  Metalorganic precursors for vapour phase epitaxy , 1993 .

[9]  Sarah Kurtz,et al.  EFFECT OF GROWTH RATE ON THE BAND GAP OF GA0.5IN0.5P , 1990 .

[10]  P. C. Taylor,et al.  Excitation intensity dependence of photoluminescence in Ga0.52In0.48P , 1990 .

[11]  J. Olson,et al.  Growth temperature and substrate orientation dependences of moving emission and ordering in Ga0.52 In0.48 P , 1990 .

[12]  Alex Zunger,et al.  Band‐gap narrowing in ordered and disordered semiconductor alloys , 1990 .

[13]  Kohroh Kobayashi,et al.  Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy , 1987 .

[14]  Kohroh Kobayashi,et al.  Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature , 1986 .

[15]  G. B. Stringfellow,et al.  Effects of growth temperature and ratio on surface structure and ordering in Ga0.5In0.5P , 1997 .