Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs

Abstract Prestress and poststress low-frequency noise characteristics of buried-channel LDD pMOSFETs have been studied. The devices were stressed at low gate and high drain bias, and the poststress drain current increases due to the hot-electron induced channel shortening effect. The noise measurements were carried out between 10 Hz and 100 kHz, 1/ f 1.2 and generation–recombination current noises have been found in the drain current noises. The poststress 1/ f 1.2 drain current noise increases in both the linear and saturation regime. This behavior is attributed to the increase of interface states and oxide electron charges after stress.

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