Sources of error in electrical measurements of dimensional offset and sheet resistance in the near- and sub-micron region
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The accuracy of the measurements of the sheet resistance and dimensional offsets for several conducting layers is investigated using various test structures with design widths ranging from 0.6 mu m to 32 mu m. Width-independence as well as electric field-dependence of the sheet resistance is found to be a main source of error. Different topography beneath resistor stripes and nonisotropic processing in the submicron region further affect the measurement results.<<ETX>>
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