论文信息 - Internal photoemission and energy‐band offsets in GaAs‐GaInP p‐I‐N heterojunction photodiodes

Internal photoemission and energy‐band offsets in GaAs‐GaInP p‐I‐N heterojunction photodiodes

Internal photoemission has been observed in GaAs‐Ga0.52In0.48P p‐I‐N heterojunction photodiodes grown by gas source molecular beam epitaxy. Threshold energies associated with this photocurrent mechanism have been accurately measured. Simple analysis provides a precise determination of the energy‐band discontinuities in this heterostructure material system. The results indicate a conduction‐band discontinuity of ΔEc=108±6 meV at room temperature.Internal photoemission has been observed in GaAs‐Ga0.52In0.48P p‐I‐N heterojunction photodiodes grown by gas source molecular beam epitaxy. Threshold energies associated with this photocurrent mechanism have been accurately measured. Simple analysis provides a precise determination of the energy‐band discontinuities in this heterostructure material system. The results indicate a conduction‐band discontinuity of ΔEc=108±6 meV at room temperature.

[1] Jacques I. Pankove,et al. Optical Processes in Semiconductors , 1971 .

[2] G. Y. Robinson,et al. Growth of InGaP on GaAs using gas‐source molecular‐beam epitaxy , 1989 .

[3] G. Y. Robinson,et al. High Quality Quantum Wells of InGaP/GaAs Grown by Molecular Beam Epitaxy , 1989, Quantum Wells for Optics and Optoelectronics.

[4] S. I. Long,et al. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction by C‐V profiling , 1987 .

[5] G. Stillman,et al. Internal photoemission and band discontinuities at Ga0.47In0.53As‐InP heterojunctions , 1989 .

[6] G. Stillman,et al. Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodes , 1987 .

[7] M. Takikawa,et al. Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy , 1986 .

[8] Miyoko O. Watanabe,et al. Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique , 1987 .

[9] M. Razeghi,et al. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition , 1990 .

[10] H. Kawai,et al. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gain Npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition , 1989 .