Generation of surface acoustic waves on doped semiconductor substrates

We report on the electrical generation of surface acoustic waves (SAWs) on doped semiconductor substrates. This is implemented by using interdigital transducers (IDTs) placed on piezoelectric ZnO films sputtered onto evaporated thin metal layers. Two material systems are investigated, namely ZnO/Au/GaAs and ZnO/Ni/InP. The rf-field applied to the transducer is electrically screened by the highly conductive metal film underneath the ZnO film without any extra ohmic losses. As a result, absorption of the rf-field by the mobile carriers in the lossy doped region underneath the IDT is avoided, ensuring efficient SAW generation. We find that the growth temperature of the ZnO film on the metal layer affects its structure and, thus, the efficiency of SAW generation. With this technique, the SAW active layers can be placed close to doped layers, expanding the application range of SAWs in semiconductor devices.

[1]  M Pepper,et al.  High-frequency single-electron transport in a quasi-one-dimensional GaAs channel induced by surface acoustic waves , 1996, Journal of physics. Condensed matter : an Institute of Physics journal.

[2]  R. Baumann,et al.  Deposition and physical characterization of thin films of lithium niobate on silicon substrates , 1990 .

[3]  Supriyo Datta,et al.  Surface Acoustic Wave Devices , 1986 .

[4]  Rudolf Hey,et al.  Long-range exciton transport by dynamic strain fields in a GaAs quantum well , 2007 .

[5]  Rudolf Hey,et al.  Scalable interconnections for remote indirect exciton systems based on acoustic transport , 2014 .

[6]  Eugène Dieulesaint,et al.  Elastic Waves in Solids II , 2000 .

[7]  N. F. Foster,et al.  ZINC OXIDE FILM TRANSDUCERS , 1966 .

[8]  Christophe Geuzaine,et al.  Gmsh: A 3‐D finite element mesh generator with built‐in pre‐ and post‐processing facilities , 2009 .

[9]  N. F. Foster.  Crystallographic Orientation of Zinc Oxide Films Deposited by Triode Sputtering , 1969 .

[10]  M. M. de Lima,et al.  Modulation of photonic structures by surface acoustic waves , 2005 .

[11]  A. Ballato,et al.  Piezoelectric materials for acoustic wave applications , 1994, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

[12]  P. Santos,et al.  Exciton transport by moving strain dots in GaAs quantum wells , 2010 .

[13]  C. Caliendo,et al.  Structural, optical, and acoustic characterization of high-quality AlN thick films sputtered on Al2O3(0001) at low temperature for GHz-band electroacoustic devices applications , 2004 .

[14]  Weimann,et al.  Surface acoustic waves on GaAs/AlxGa1-xAs heterostructures. , 1989, Physical review. B, Condensed matter.

[15]  G. Kino,et al.  ZnO Acoustic Transducers Utilizing Crystalline Gold Substrata , 1972 .

[16]  S. Hermelin,et al.  Fast end efficient single electron transfer between distant quantum dots , 2017 .

[17]  J. V. D. Veen,et al.  Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon , 2013 .

[18]  Ronen Rapaport,et al.  Dynamics of indirect exciton transport by moving acoustic fields , 2013, 1310.6968.

[19]  C. H. W. Barnes,et al.  On-demand single-electron transfer between distant quantum dots , 2011, Nature.

[20]  G. Kino,et al.  Theory of interdigital couplers on nonpiezoelectric substrates , 1973 .

[21]  P. Santos,et al.  Exciton transport by surface acoustic waves , 2007 .

[22]  Andreas D. Wieck,et al.  Electrons surfing on a sound wave as a platform for quantum optics with flying electrons , 2011, Nature.

[23]  Christophe Geuzaine,et al.  A general environment for the treatment of discrete problems and its application to the finite element method , 1998 .