论文信息 - Si multidot single-charge tunneling devices

Si multidot single-charge tunneling devices

Si multidot single-charge tunneling devices have been studied from a view point of current modulation by means of light-illumination, side-gate and unintentional self-gate effect. The results provides us the preliminary basis of control of percolation path in a 2D-multidot plane as well as dynamical single-charge transport, which is essential for developing new functional devices.

H. Ikeda | M. Tabe | Y. Ishikawa | R. Nuryadi

[1] H. Ikeda,et al. Ambipolar Coulomb blockade characteristics in a two-dimensional Si multidot device , 2003 .

[2] H. Ikeda,et al. Resonant tunneling characteristics in SiO2/Si double-barrier structures in a wide range of applied voltage , 2003 .

[3] M. Tabe,et al. Negative differential conductance due to resonant tunnelling through SiO/sub 2//single-crystalline-Si double barrier structure , 2001 .

[4] P. D. Tougaw,et al. Quantum Cellular Automata , 1994 .