An x‐ray photoelectron spectroscopy and low‐energy electron diffraction controlled surface preparation of Si(100) prior to epitaxial growth of GaAs

Low‐energy electron diffraction (LEED) and x‐ray photoelectron spectroscopy (XPS) analyses have been performed after the different steps of a Si(100) low temperature cleaning procedure prior to GaAs heteroepitaxial growth. The residual oxygen and carbon contamination observed after deoxidation by HF–ethanol under dry nitrogen is not completely eliminated after heating to 750 °C under ultrahigh vacuum, in spite of the observation of a clear 2×1 LEED pattern. The complete removal of oxygen and carbon is only achieved after deposition of a thin GaAs prelayer and its evaporation at 750 °C.