Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

Back-gated measurements on conductive silicon substrates have been performed to investigate the effect of stress voltage on the dynamic behaviour of GaN-on-silicon (GaN-on-Si) transistors. Two comparable samples were studied with the only difference being the vertical dislocation density. Results show a clear correlation between dislocation density and the ability of the GaN buffer to dynamically discharge under high stress conditions.

[1]  M. Eizenberg,et al.  Role of Transport During Transient Phenomena in AlGaN/GaN Heterostructure FETs , 2015, IEEE Electron Device Letters.

[2]  S. C. Foo,et al.  Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) , 2015 .

[3]  Gaudenzio Meneghesso,et al.  Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage , 2015, IEEE Transactions on Electron Devices.

[4]  Siddharth Rajan,et al.  A study of electrically active traps in AlGaN/GaN high electron mobility transistor , 2013 .

[5]  M. Meneghini,et al.  Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements , 2013, IEEE Transactions on Electron Devices.

[6]  P. Park,et al.  Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures , 2013, 1302.3942.

[7]  T. Oka,et al.  AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications , 2008, IEEE Electron Device Letters.

[8]  Peter Kordos,et al.  Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy , 2003 .

[9]  Alan Francis Wright,et al.  Role of carbon in GaN , 2002 .

[10]  T. Kazior,et al.  Trapping effects in GaN and SiC microwave FETs , 2002, Proc. IEEE.

[11]  J. B. Webb,et al.  Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy , 1999 .

[12]  Jungwoo Joh,et al.  A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors , 2011, IEEE Transactions on Electron Devices.