Transient Current Behavior of Vertically Integrated Amorphous Silicon Diodes
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[1] R. A. Street,et al. Thermal generation currents in hydrogenated amorphous silicon p - i - n structures , 1990 .
[2] A. Minakov,et al. REMANENT MAGNETIZATION OF CERAMIC AND SINGLE-CRYSTAL HIGH-TC SUPERCONDUCTORS IN TILTED MAGNETIC FIELDS , 1996 .
[3] Markus Böhm,et al. Design and fabrication of a high-dynamic-range image sensor in TFA technology , 1999 .
[4] Pierre Jarron,et al. Image Sensors Based on Thin-film on CMOS Technology: Additional Leakage Currents due to Vertical Integration of the a-Si:H Diodes , 2006 .
[5] Rolf Kaufmann,et al. Performance analysis of a-Si:H detectors deposited on CMOS chips , 2004 .
[6] H. Okamoto,et al. Measurement of deep states in undoped amorphous silicon by current transient spectroscopy , 1986 .