论文信息 - Interaction of intense ultrashort XUV pulses with silicon

Interaction of intense ultrashort XUV pulses with silicon

Single shot radiation damage of bulk silicon induced by ultrashort XUV pulses was studied. The sample was chosen because it is broadly used in XUV optics and detectors where radiation damage is a key issue. It was irradiated at FLASH facility in Hamburg, which provides intense femtosecond pulses at 32.5 nm wavelength. The permanent structural modifications of the surfaces exposed to single shots were characterized by means of phase contrast optical microscopy and atomic force microscopy. Mechanisms of different, intensity dependent stages of the surface damage are described.

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