The phase relations in the In2O3Ga2ZnO4ZnO system at 1350°C

Abstract The phase relations in the In2O3Ga2ZnO4ZnO system at 1350°C are determined by a classical quenching method. In this system there exist an (InGaO3)2ZnO phase with Yb2Fe3O7-type structure and homologous phases with solid solution ranges In1.33Ga0.67O3(ZnO)InGaO3(ZnO)In0.92Ga1.08O3(ZnO), In1.68Ga0.32O3(ZnO)2InGaO3(ZnO)2In0.68Ga1.32O3(ZnO)2, In2O3(ZnO)3InGaO3(ZnO)3In0.54Ga1.46O3(ZnO)3, In2O3(ZnO)4InGaO3(ZnO)4In0.46Ga1.54O3(ZnO)4, In2O3(ZnO)5InGaO3(ZnO)5In1−xGa1+xO3(ZnO)5 (0.68 ≤ x ≤ 0.72), In2O3(ZnO)6InGaO3(ZnO)6In1−xGa1+xO3(ZnO)6 (0.68 ≤ x ≤ 0.79), In2O3(ZnO)7InGaO3(ZnO)7In1−xGa1+xO3(ZnO)7 (0.70 ≤ x ≤ 0.74), In2O3(ZnO)8InGaO3(ZnO)8In1−xGa1+xO3(ZnO)8 (0.60 ≤ x ≤ 0.68), In2O3(ZnO)9InGaO3(ZnO)9In1−xGa1+xO3(ZnO)9 (0.56 ≤ x ≤ 0.72), In2O3(ZnO)10InGaO3(ZnO)10In1−xGa1+xO3(ZnO)10 (0.47 ≤ x ≤ 0.67), In2O3(ZnO)11InGaO3(ZnO)11In1−xGa1+xO3(ZnO)11 (0.57 ≤ x ≤ 0.64), In2O3(ZnO)12InGaO3(ZnO)12In1−xGa1+xO3(ZnO)12 (x ≤ 0.64), and In2O3(ZnO)13InGaO3(ZnO)13In1−xGa1+xO3(ZnO)13 (0.49 ≤ x ≤ 0.75) in which InGaO3(ZnO)m (m = 1–13) is isostructural with InFeO3(ZnO)m. ZnO has a solid solution range, Zn1−xGa2xO1+2x (x = 0–0.094) to the direction of Ga2ZnO4, and Ga2ZnO4 has a solid solution range, Ga2−xInxZnO4 (x = 0–0.128(4)) to the direction of InGaO3(ZnO). A comparison between the phase relations in the In2O3Ga2ZnO4ZnO system and those in the In2O3Fe2ZnO4ZnO system is made, and the crystal chemical effects of Fe(III) and Ga(III) cations upon the phase relations in these systems are discussed.