The structures of Si near‐surface damage induced after the removal of a thick SiO2 layer on Si using reactive ion etching with various etching gases were studied by transmission electron microscopy. Cross‐sectional micrographs showed the presence of a fluorocarbon film on the Si surface after the SiO2 layer is etched away. No extended defects were observed in Si etched utilizing pure CF4 or CF4/20% H2 etching gas, even after a 25‐min overetch into Si. For a CF4/40% H2 etching gas, no extended lattice defects were evident for overetch times of up to 5 min. However, extensive damage was found in the Si surface layer after a 10‐min or longer overetch. This extensive damage consists of {111} planar defects distributing underneath the Si surface to a depth of 300 A. The planar defects are highly decorated by impurities, likely H and possibly C, F. A pure H2 etching gas was found to introduce a heavily damaged layer and a high density of extended defects near the Si surface after only a 5‐min overetch. These ob...
[1]
J. Weber,et al.
New method to determine the carbon concentration in silicon
,
1986
.
[2]
G. Oehrlein.
Rutherford backscattering studies of plasma‐etched silicon
,
1986
.
[3]
Y. H. Lee,et al.
Near-surface damage and contamination after CF/sub 4//H/sub 2/ reactive ion etching of Si
,
1985
.
[4]
D. J. Silversmith,et al.
Damage induced in Si by ion milling or reactive ion etching
,
1983
.
[5]
N. Cheung,et al.
The crystalline to amorphous transformation in silicon
,
1983
.
[6]
L. Ephrath,et al.
Parameter and Reactor Dependence of Selective Oxide RIE in CF 4 + H 2
,
1982
.