Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

[1]  H. Amano,et al.  Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer , 1991 .

[2]  Manijeh Razeghi,et al.  High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates , 1995 .

[3]  Kazuhiko Itaya,et al.  Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers , 1997 .

[4]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[5]  C. Sone,et al.  Changes in the growth mode of low temperature GaN buffer layers with nitrogen plasma nitridation of sapphire substrates , 1997 .

[6]  G. Zhao,et al.  ELECTRONIC STRUCTURE AND CHARGE TRANSFER IN ALPHA - AND BETA -SI3N4 AND ATTHE SI(111)/SI3N4(001) INTERFACE , 1998 .

[7]  W. Knap,et al.  Phonon modes and metal-insulator transition in GaN crystals under pressure , 1998 .

[8]  C. A. Parker,et al.  Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC , 1998 .

[9]  H. Okumura,et al.  GAN HETEROEPITAXIAL GROWTH ON SILICON NITRIDE BUFFER LAYERS FORMED ON SI (111) SURFACES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY , 1998 .

[10]  M. Razeghi,et al.  Band-gap narrowing and potential fluctuation in Si-doped GaN , 1999 .

[11]  Hadis Morkoç,et al.  Direct evidence of tensile strain in wurtzite structure n-GaN layers grown on n-Si(111) using AlN buffer layers , 1999 .

[12]  Henryk Temkin,et al.  HIGH QUALITY GAN GROWN ON SI(111) BY GAS SOURCE MOLECULAR BEAM EPITAXY WITH AMMONIA , 1999 .

[13]  Lester F. Eastman,et al.  GaN/SiC heterojunction bipolar transistors , 2000 .

[14]  Pierre Gibart,et al.  Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates , 2002 .

[15]  Peng Chen,et al.  Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111) , 2002 .

[16]  Jeong Won Kim,et al.  Surface and interface structures of epitaxial silicon nitride on Si(111) , 2003 .

[17]  Min Xie,et al.  Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire , 2003 .

[18]  W. Uen,et al.  Epitaxial growth of high-quality GaN on appropriately nitridated Si substrate by metal organic chemical vapor deposition , 2005 .

[19]  G. Andrew D. Briggs,et al.  Growth modes in heteroepitaxy of InGaN on GaN , 2005 .