Scalability and logic functionalities of TA-MRAMs

This paper describes the working principle of thermally assisted MRAM extending the downsize scalability of MRAM and introducing new functionalities particularly useful for security applications. Ultimately, STT switching assisted by thermally induced anisotropy reorientation can be used in MTJ with perpendicular magnetic anisotropy to obtain ultimate downsize scalability with reduced power consumption.

[1]  Direction of the magnetization of thin films and sandwiches as a function of temperature. , 1990 .

[2]  B. Diény,et al.  Spin transfer torque switching assisted by thermally induced anisotropy reorientation in perpendicular magnetic tunnel junctions , 2011 .

[3]  J. Slonczewski.  Current-driven excitation of magnetic multilayers , 1996 .

[4]  Bernard Rodmacq,et al.  Crossover from in-plane to perpendicular anisotropy in Pt/CoFe/AlOx sandwiches as a function of Al oxidation: A very accurate control of the oxidation of tunnel barriers , 2002 .

[5]  P. Freitas,et al.  Tunneling hot spots and heating in magnetic tunnel junctions , 2004 .

[6]  M. Ogawa,et al.  Right-Brain/Left-Brain Integrated Associative Processor Employing Convertible Multiple-Instruction-Stream Multiple-Data-Stream Elements , 2005 .

[7]  Ricardo Sousa,et al.  Non-volatile magnetic random access memories (MRAM) , 2005 .

[8]  Kinder,et al.  Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. , 1995, Physical review letters.

[9]  Berger.  Emission of spin waves by a magnetic multilayer traversed by a current. , 1996, Physical review. B, Condensed matter.

[10]  Z. Diao,et al.  Spin transfer switching current reduction in magnetic tunnel junction based dual spin filter structures , 2005 .

[11]  Bernard Dieny,et al.  Dynamic heating in submicron size magnetic tunnel junctions with exchange biased storage layer , 2005 .

[12]  Y. Huai,et al.  Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions , 2004, cond-mat/0504486.