An efficient parameter extraction methodology for the EKV MOST model

This paper presents a new parameter extraction methodology, based on an accurate and continuous MOS model dedicated to low-voltage and low-current analog circuit design and simulation (EKV MOST Model). The extraction procedure provides the key parameters from the pinch-off versus gate voltage characteristic, measured at constant current from a device biased in moderate inversion. Unique parameter sets, suitable for statistical analysis, describe the device behavior in all operating regions and over all device geometries. This efficient and simple method is shown to be accurate for both submicron bulk CMOS and fully depleted SOI technologies.

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