Characterization of Cu/Si(100) interfaces by different surface-sensitive techniques
暂无分享,去创建一个
J. Métois | P. Mathiez | M. Hanbücken | F. Salvan | E. Daugy
[1] J. Métois,et al. Combined AES, LEED, SEM and TEM characterizations of CuSi(100) interfaces , 1985 .
[2] Weaver,et al. Characterization of intermixing at metal-semiconductor interfaces by angle-resolved Auger-electron emission: Cu/Si(111)-7 x 7. , 1985, Physical review. B, Condensed matter.
[3] J. Layet,et al. 7 × 7 Si(111)Cu interfaces: Combined LEED, AES and EELS measurements , 1985 .
[4] D. Bolmont,et al. Effect of Cu deposition on structural and electronic properties of cleaved Si(111) surfaces , 1985 .
[5] I. Lindau,et al. Compound formation and bonding configuration at the Si-Cu interface , 1983 .
[6] W. Spicer,et al. Similarities in chemical intermixing at the Cu/InP and Cu/Si interfaces , 1983 .
[7] J. Derrien,et al. Formation and properties of the copper silicon(111) interface , 1983 .
[8] W. Spicer,et al. The Si(111)/Cu interface studied with surface sensitive techniques , 1983 .
[9] M. Grioni,et al. Photoemission investigation of Si(111)–Cu interfaces , 1981 .
[10] J. Rowe,et al. Surface-State Transitions of Silicon in Electron Energy-Loss Spectra , 1973 .