Physics of the Negative Resistance in the Avalanche $I{-}V$ Curve of Field Stop IGBTs: Collector Design Rules for Improved Ruggedness

In this paper, we investigate the avalanche behavior of field-stop insulated gate bipolar transistors (IGBTs) by means of analytical and theoretical considerations, supported by ad hoc numerical simulations. A physical explanation of the presence of negative differential resistance branches in the avalanche I-V curve of the IGBT is presented and design criteria are derived to reduce and eventually eliminate this effect.

[1]  J.B. Bernstein,et al.  Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).

[2]  Andrea Irace,et al.  Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell , 2007, Microelectron. Reliab..

[3]  Andrea Irace,et al.  Detection of localized UIS failure on IGBTs with the aid of lock-in thermography , 2008, Microelectron. Reliab..

[4]  D. Silber,et al.  Trench IGBT behaviour near to latch-up conditions , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

[5]  E. Napoli,et al.  3D electro-thermal simulations of wide area power devices operating in avalanche condition , 2012, Microelectron. Reliab..

[6]  T. Laska,et al.  The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

[7]  Frank Pfirsch,et al.  Investigations on the stability of dynamic avalanche in IGBTs , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[8]  Josef Lutz,et al.  Effects of negative differential resistance in high power devices and some relations to DMOS structures , 2010, 2010 IEEE International Reliability Physics Symposium.

[9]  A. Irace,et al.  Electro-thermal instability in multi-cellular Trench-IGBTs in avalanche condition: Experiments and simulations , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[10]  A. Irace,et al.  Experimental Detection and Numerical Validation of Different Failure Mechanisms in IGBTs During Unclamped Inductive Switching , 2013, IEEE Transactions on Electron Devices.

[11]  Krishna Shenai,et al.  Electrothermal simulations in punchthrough and nonpunchthrough IGBT's , 1998 .

[12]  Andrea Irace,et al.  Influence of charge balance on the robustness of trench-based super junction diodes , 2012, Microelectron. Reliab..

[13]  Andrea Irace,et al.  Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations , 2013, Microelectron. Reliab..

[14]  A. Irace,et al.  Voltage drops, sawtooth oscillations and HF bursts in Breakdown Current and Voltage waveforms during UIS experiments , 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

[15]  T. Shoji,et al.  Investigations on current filamentation of IGBTs under undamped inductive switching conditions , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

[16]  B. Jayant Baliga,et al.  Fundamentals of Power Semiconductor Devices , 2008 .