论文信息 - Electrothermal harmonic balance simulation of an INGAP/GAAS HBT based on 3D thermal and semiconductor transport models

Electrothermal harmonic balance simulation of an INGAP/GAAS HBT based on 3D thermal and semiconductor transport models

A parallel implementation of the direct coupling of InGaP/GaAs HBT transport equations has been included in an Harmonic Balance simulator. Several results such as a class AB amplifier for mobile communication study and a stability analysis of “crunch effect” in multi-finger HBT have been performed.

Raphaël Sommet | Raymond Quéré | David Lopez

[1] Zhiping Yu,et al. Large Signal Analysis of RF Circuits in Device Simulation , 1999 .

[2] R. Quere,et al. A pulsed-measurement based electrothermal model of HBT with thermal stability prediction capabilities , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[3] R. Quere,et al. A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits , 1997 .

[4] Jack Dongarra,et al. MPI: The Complete Reference , 1996 .

[5] Wen-Chau Liu,et al. The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling , 1994 .