Time-Dependent Many-Particle Simulation for Resonant Tunneling Diodes: Interpretation of an Analytical Small-Signal Equivalent Circuit
暂无分享,去创建一个
F Calmon | F. Traversa | A. Poncet | F. Calmon | R. Clerc | E. Buccafurri | X. Oriols | A. Alarcón | G. Albareda | F L Traversa | E Buccafurri | A Alarcon | G Albareda | R Clerc | A Poncet | X Oriols | G. Albareda
[1] Timothy Boles,et al. MMIC based phased array radar T/R modules , 2010, The 7th European Radar Conference.
[2] P. Chahal,et al. Unified AC model for the resonant tunneling diode , 2004, IEEE Transactions on Electron Devices.
[3] Y. Blanter,et al. Shot noise in mesoscopic conductors , 1999, cond-mat/9910158.
[4] F. Buot. Nonequilibrium Quantum Transport Physics in Nanosystems: Foundation of Computational Nonequilibrium Physics in Nanoscience and Nanotechnology , 2009 .
[5] Simon Haykin,et al. Communication Systems , 1978 .
[6] X. Oriols,et al. Quantum-trajectory approach to time-dependent transport in mesoscopic systems with electron-electron interactions. , 2007, Physical review letters.
[7] Serge Luryi,et al. Nonclassical devices in SOI: Genuine or copyright from III-V , 2007 .
[8] Yun Zheng,et al. Self-consistent transit-time model for a resonant tunnel diode , 2004, IEEE Transactions on Electron Devices.
[9] O. Rozeau,et al. High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding , 2008, 2008 IEEE International Electron Devices Meeting.
[10] L. Esaki,et al. Tunneling in a finite superlattice , 1973 .
[11] J. Suñé,et al. Many-particle Hamiltonian for open systems with full Coulomb interaction: Application to classical and quantum time-dependent simulations of nanoscale electron devices , 2009 .
[12] Shawn Patrick Stapleton,et al. Scattering parameter measurements of resonant tunneling diodes up to 40 GHz , 1995 .
[13] T. C. L. G. Sollner,et al. Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory , 1988 .
[14] X. Oriols,et al. Computation of quantum electron transport with local current conservation using quantum trajectories , 2009 .
[15] Chen,et al. ac conductance of a double-barrier resonant tunneling system under a dc-bias voltage. , 1990, Physical review letters.
[16] L. Esaki,et al. Resonant tunneling in semiconductor double barriers , 1974 .
[17] T. C. McGill,et al. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes , 1991 .
[18] Safumi Suzuki,et al. Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators , 2008 .
[19] B. Majkusiak. Resonant Tunneling Devices on SOI Basis , 2007 .
[20] Serge Luryi,et al. Frequency limit of double‐barrier resonant‐tunneling oscillators , 1985 .
[21] Raphael Tsu,et al. Superlattice and negative differential conductivity in semiconductors , 1970 .
[22] Intrinsic cut off frequency of Si and GaAs based Resonant Tunneling Diodes , 2009, 2009 10th International Conference on Ultimate Integration of Silicon.
[23] H.J. De Los Santos,et al. An efficient HBT/RTD oscillator for wireless applications , 2001, IEEE Microwave and Wireless Components Letters.
[24] Michael N. Feiginov,et al. Displacement currents and the real part of high-frequency conductance of the resonant-tunneling diode , 2001 .
[25] Buot Fa,et al. High-frequency behavior of quantum-based devices: Equivalent-circuit, nonperturbative-response, and phase-space analyses. , 1993 .
[26] D. Ferry,et al. Transport in nanostructures , 1999 .
[27] E A Poltoratsky,et al. The dynamic nature of peculiarities of RTS static I-V characteristic , 2001 .
[28] William R. Frensley,et al. Quantum transport calculation of the small‐signal response of a resonant tunneling diode , 1987 .
[29] S. Stapleton,et al. Quantum capacitance of resonant tunneling diodes , 1991 .
[30] H. C. Lin,et al. Resonant tunneling diodes for multi-valued digital applications , 1994, Proceedings of 24th International Symposium on Multiple-Valued Logic (ISMVL'94).
[31] Hadis Morkoç,et al. A small-signal equivalent-circuit model for GaAs-AlxGa1−xAs resonant tunneling heterostructures at microwave frequencies , 1987 .
[32] M. Vinet,et al. Bonded planar double-metal-gate NMOS transistors down to 10 nm , 2005, IEEE Electron Device Letters.
[33] G. Ghibaudo,et al. Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes , 2008 .
[34] T. C. L. G. Sollner,et al. Effect of quasibound‐state lifetime on the oscillation power of resonant tunneling diodes , 1989 .
[35] M. Büttiker. Coherent and sequential tunneling in series barriers , 1988 .
[36] Dwight L. Woolard,et al. Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent Wigner-Poisson simulation , 2001 .
[37] Didier Lippens,et al. Direct evidence of the quasibound-state lifetime effect in resonant tunneling from impedance measurements , 1992 .
[38] X. Cartoixà,et al. Time-dependent boundary conditions with lead-sample Coulomb correlations: Application to classical and quantum nanoscale electron device simulators , 2010 .
[39] Pinaki Mazumder,et al. Digital circuit applications of resonant tunneling devices , 1998, Proc. IEEE.
[40] Pinaki Mazumder,et al. Resonant tunneling diodes: models and properties , 1998, Proc. IEEE.