论文信息 - Schottky barrier height of n‐InxGa1−xAs diodes

Schottky barrier height of n‐InxGa1−xAs diodes

The barrier heights φB of Au/n‐InxGa1−xAs diodes are measured by the capacitance‐voltage and saturation current methods. The composition dependence of the barrier height is φB (eV) = 0.95 − 1.90x + 0.90x2. A low barrier height with a relatively wide band gap is obtained in this system.

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