Accurate SPICE Modeling of Reverse-Conducting IGBTs Including Self-Heating Effects

In this paper, a temperature-dependent compact SPICE model of reverse-conducting IGBTs (RC-IGBTs) is presented. The proposed solution is based on a quasi-two-dimensional (2-D) approach, with the use of IGBT and p-i-n diode subcircuits suitably connected to take into account the inner interactions among the two devices. The resulting device model is derived through physical considerations on the RC-IGBT internal behavior, carried out by means of wide area TCAD 2-D simulations. Transversal current path, localized lifetime control effects, and turn-on dynamics are also included into the model. The model shows good robustness properties, even in demanding numerical conditions. Validation of the SPICE model with experiments performed on a 1.2-kV 30-A commercial device, in both static and dynamic conditions, demonstrates its remarkable correctness and accuracy. To further confirm the applicability of the proposed model in real-operating conditions, a quasi-resonant converter has been realized and the measurements on the realized circuit have been successfully compared with the results obtained with the proposed model.

[1]  Cher Ming Tan,et al.  Using power diode models for circuit simulations-a comprehensive review , 1999, IEEE Trans. Ind. Electron..

[2]  Huabei Jiang,et al.  Low turnoff loss reverse-conducting IGBT with double n-p-n electron extraction paths , 2012 .

[3]  Xingbi Chen,et al.  Snapback-free reverse-conducting IGBT with low turnoff loss , 2014 .

[4]  Krishna Shenai,et al.  A critique of the turn-on physics of power bipolar devices , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[5]  Iraj Sheikhian,et al.  Optimisation of the reverse conducting IGBT for zero-voltage switching applications such as induction cookers , 2014, IET Circuits Devices Syst..

[6]  Min Ren,et al.  A snapback suppressed reverse-conducting IGBT with soft reverse recovery characteristic , 2013 .

[7]  Antonio G. M. Strollo,et al.  Power rectifier model including self heating effects , 1998 .

[8]  M. Cotorogea.  Physics-Based SPICE-Model for IGBTs With Transparent Emitter , 2009, IEEE Transactions on Power Electronics.

[9]  E. Santi,et al.  Parameter extraction for a physics-based circuit simulator IGBT model , 2003, Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2003. APEC '03..

[10]  Antonio G. M. Strollo,et al.  Improved PIN diode circuit model with automatic parameter extraction technique , 1997 .

[11]  K. Shenai,et al.  Evaluation of turn-on performance of P-i-N rectifiers and IGBT's under zero voltage switching , 1996 .

[12]  Luca Maresca,et al.  Impact of gate drive voltage on avalanche robustness of trench IGBTs , 2014, Microelectron. Reliab..

[13]  M. Stoisiek,et al.  Bistability and hysteresis in the characteristics of segmented-anode lateral IGBTs , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

[14]  J. Acero,et al.  Analysis and Modeling of Planar Concentric Windings Forming Adaptable-Diameter Burners for Induction Heating Appliances , 2011, IEEE Transactions on Power Electronics.

[15]  R. Kraus,et al.  Physics-based models of power semiconductor devices for the circuit simulator SPICE , 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).

[16]  Sameer Pendharkar,et al.  Zero voltage switching behavior of punchthrough and nonpunchthrough insulated gate bipolar transistors (IGBT's) , 1998 .

[17]  A. Irace,et al.  An effective parameters calibration technique for PSpice IGBT models application , 2014, 2014 International Symposium on Power Electronics, Electrical Drives, Automation and Motion.

[18]  Petar Igic,et al.  All injection level power PiN diode model including temperature dependence , 2007 .

[19]  D. M. Diebolt,et al.  An experimentally verified IGBT model implemented in the Saber circuit simulator , 1991, PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference.

[20]  M. Rahimo,et al.  Inherently soft free-wheeling diode for high temperature operation , 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[21]  Tom Dhaene,et al.  Effective Electrothermal Analysis of Electronic Devices and Systems with Parameterized Macromodeling , 2015, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[22]  Munaf Rahimo,et al.  Freewheeling diode reverse-recovery failure modes in IGBT applications , 2001 .

[23]  Munaf Rahimo,et al.  A comparison of charge dynamics in the reverse-conducting RC IGBT and Bi-mode Insulated Gate Transistor BiGT , 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[24]  V. d'Alessandro,et al.  SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs , 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[25]  F. Udrea,et al.  A new way to alleviate the RC IGBT snapback phenomenon: The Super Junction solution , 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

[26]  L. Ngwendson,et al.  RC-TCIGBT: A Reverse Conducting Trench Clustered , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

[27]  F. Udrea,et al.  Advanced SPICE modeling of large power IGBT modules , 2004, IEEE Transactions on Industry Applications.

[28]  Paolo Spirito,et al.  Numerical analysis of local lifetime control for high-speed low-loss P-i-N diode design , 1999 .

[29]  Munaf Rahimo,et al.  Reverse conducting-IGBTs initial snapback phenomenon and its analytical modelling , 2014, IET Circuits Devices Syst..

[30]  Luis Angel Barragan,et al.  A Versatile Power Electronics Test-Bench Architecture Applied to Domestic Induction Heating , 2011, IEEE Transactions on Industrial Electronics.

[31]  O. Ikawa,et al.  New reverse-conducting IGBT (1200V) with revolutionary compact package , 2014 .

[32]  Luca Maresca,et al.  A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design , 2015, Microelectron. Reliab..

[33]  Antonio G. M. Strollo,et al.  A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation , 1997 .

[34]  Antonio G. M. Strollo,et al.  Automatic parameter extraction technique for a PiN diode circuit model , 1997, 1997 21st International Conference on Microelectronics. Proceedings.

[35]  Antonio G. M. Strollo,et al.  A new IGBT circuit model for SPICE simulation , 1997, PESC97. Record 28th Annual IEEE Power Electronics Specialists Conference. Formerly Power Conditioning Specialists Conference 1970-71. Power Processing and Electronic Specialists Conference 1972.

[36]  U. Schlapbach,et al.  The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

[37]  A. R. Hefner.  Modeling buffer layer IGBTs for circuit simulation , 1993 .

[38]  H. Takahashi,et al.  1200V reverse conducting IGBT , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[39]  U. Schlapbach,et al.  New plasma shaping technology for optimal high voltage diode performance , 2007, 2007 European Conference on Power Electronics and Applications.