Modeling of flicker noise in quasi-ballistic devices
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[1] M. Alam,et al. Low-frequency noise and RTN on near-ballistic III–V GAA nanowire MOSFETs , 2014, 2014 IEEE International Electron Devices Meeting.
[2] A. Khakifirooz,et al. A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters , 2009, IEEE Transactions on Electron Devices.
[3] Yogesh Singh Chauhan,et al. FinFET modeling for IC simulation and design , 2015 .
[4] S. Khandelwal,et al. Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices , 2012, IEEE Transactions on Electron Devices.
[5] K. Natori. Ballistic/quasi-ballistic transport in nanoscale transistor , 2008 .
[6] Iannaccone. Analytical and numerical investigation of noise in nanoscale ballistic field effect transistors , 2004 .
[7] D. Munteanu,et al. Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation , 2009, IEEE Transactions on Electron Devices.
[8] Dimitri A. Antoniadis,et al. An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors—Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance , 2015, IEEE Transactions on Electron Devices.
[9] G. Gildenblat,et al. Scattering matrix based compact MOSFET model , 2002, Digest. International Electron Devices Meeting,.
[10] Christian Enz,et al. Modeling the Channel Charge and Potential in Quasi-Ballistic Nanoscale Double-Gate MOSFETs , 2014, IEEE Transactions on Electron Devices.
[11] M. Lundstrom,et al. A compact scattering model for the nanoscale double-gate MOSFET , 2002 .
[12] J. Tersoff,et al. Low-frequency noise in nanoscale ballistic transistors. , 2007, Nano letters.
[13] Dimitri A. Antoniadis,et al. An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors—Part II: Experimental Verification , 2015, IEEE Transactions on Electron Devices.
[14] Lan Wei,et al. Virtual-Source-Based Self-Consistent Current and Charge FET Models: From Ballistic to Drift-Diffusion Velocity-Saturation Operation , 2012, IEEE Transactions on Electron Devices.
[15] Shaloo Rakheja,et al. A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes , 2014, 2014 IEEE International Electron Devices Meeting.
[16] Yogesh Singh Chauhan,et al. Compact Modeling of Surface Potential, Charge, and Current in Nanoscale Transistors Under Quasi-Ballistic Regime , 2016, IEEE Transactions on Electron Devices.
[17] G. Iannaccone. Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors , 2004, 2004 Abstracts 10th International Workshop on Computational Electronics.
[18] Ming-Jer Chen,et al. A Parabolic Potential Barrier-Oriented Compact Model for the $k_{B}T$ Layer's Width in Nano-MOSFETs , 2008, IEEE Transactions on Electron Devices.
[19] G. Iannaccone,et al. Physics-based compact model of nanoscale MOSFETs-Part II: effects of degeneracy on transport , 2005, IEEE Transactions on Electron Devices.
[20] Chenming Hu,et al. Unified Compact Model Covering Drift-Diffusion to Ballistic Carrier Transport , 2016, IEEE Electron Device Letters.
[21] G. Iannaccone,et al. Physics-based compact model of nanoscale MOSFETs-Part I: transition from drift-diffusion to ballistic transport , 2005, IEEE Transactions on Electron Devices.
[22] Mohan Vamsi Dunga,et al. Nanoscale CMOS modeling , 2008 .