Sol-gel-derived PLZT (7/60/40) thin films on ITO/glass and LNO/glass substrates

The PLZT (7/60/40) thin films were prepared on ITO/Glass and LNO/Glass substrates by sol-gel process. The crack-free, uniform and dense films were obtained by post-annealing at the temperature between 450 degree(s)C and 600 degree(s)C. Pyrochlore phase was completely changed to perovskite phase above 570 degree(s)C with the increase of annealing temperature. The crystal buffer layer of ITO or LNO can promote the growth of perovskite. Films deposited on LNO/Glass substrates possesses good ferroelectric characteristics, Pr equals 18 (mu) C/cm2, Ec equals 55 kV/cm. The asymmetrical switching characteristics can be observed for the films deposited on LNO/Glass substrates, which is mainly due to the difference between top electrode Au and bottom electrode LNO.