DOMAIN GROWTH OF THE DAS STRUCTURE ON A QUENCHED Si(111) SURFACE STUDIED BY STM

We continuously observed the growth of the dimer–adatom–stacking-fault (DAS) domain, in unreconstructed regions remaining after quenching a Si(111) surface to 370–380°C, by using scanning tunneling microscopy. It was observed that a single faulted (F) half of the 9×9 unit cell of the DAS structure grows to a small 9×9 DAS domain. Continuous measurements showed that new F-halves are created sharing corner holes with existing F-halves. The creation of new isolated F-halves was very seldom at 370–380°C, and the region of the DAS structure was grown by expanding the area of the existing DAS domains.

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