SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology
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J.-F. Luy | Liang-Hung Lu | Zhenqiang Ma | L.P.B. Katehi | P. Bhattacharya | G.E. Ponchak | S. Mohammadi | S.A. Alterovitz | K.M. Strohm
[2] Hermann Schumacher,et al. Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/ , 1995, Proceedings of International Electron Devices Meeting.
[3] Horst Kibbel,et al. 91 GHz SiGe HBTs grown by MBE , 1993 .
[4] Bernard S. Meyerson,et al. 12-GHz Gilbert mixers using a manufacturable Si/SiGe epitaxial-base bipolar technology , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.
[5] U. Konig,et al. SiGe HBTs and HFETs , 1995 .