论文信息 - A high power Tx/Rx switch IC using AlGaN/GaN HFETs

A high power Tx/Rx switch IC using AlGaN/GaN HFETs

An extremely high power Tx/Rx switch IC based on AlGaN/GaN HFETs has been developed for the first time. A low on-state resistance realized by Si doping techniques and a low off-state capacitance by using an Al/sub 2/O/sub 3/ substrate led to excellent performance of 0.26 dB insertion loss and 27 dB isolation with the power handling capability of 43 W at 1 GHz.

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