S-parameter analysis of flip-chip transitions

Flip-chip interconnections are attractive for high density packaging of MMIC and optoelectronic modules. In this paper we investigate the electrical performance of flip-chip transitions between two coplanar waveguides in the presence of a short-circuited ground plane of either the CPW on the motherboard side or on the chip side. The method of analysis is based on the frequency-domain TLM approach which provides a rigorous field theoretical treatment of this type of discontinuity.

[1]  B. J. Buck,et al.  Flip chip-bonded GaAs MMICs compatible with foundry manufacture , 1991 .

[2]  R. Vahldieck,et al.  FDTLM Analysis of Broadband Flip-Chip Interconnections , 1994, 1994 24th European Microwave Conference.

[3]  R. Vahldieck,et al.  Rigorous field theory analysis of flip-chip interconnections in MMICs using the FDTLM method , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

[4]  P. Russer,et al.  Field theory analysis of distributed microwave effects in high speed semiconductor lasers and their interconnection with passive microwave transmission lines , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.