Work-Preserving Emulations of Fixed-Connection Networks (Extended Abstract)

A heterojunction type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, conductive layer disposed on the semiconductor layer to form therebetween a heterojunction, and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, and in which when light is incident to the semiconductor layer from the outside of the light-transparent, conductive layer, a photo-electric conversion function is obtained by the presence of the barrier of the heterojunction formed between the semiconductor layer and the light-transparent, conductive layer. In such a heterojunction type semiconductor photoelectric conversion device, a light-transparent, current-permeable nitride layer is artificially formed in the barrier of the heterojunction formed between the semiconductor layer and the light-transparent, conductive layer. The light-transparent, current-permeable nitride layer is an insulating, semi-insulating or conductive layer. The insulating nitride layer is made of a silicon nitride. The semi-insulating nitride layer is made of a silicon nitride and a conductive metal nitride. The conductive nitride layer is made of a conductive metal nitride. In the abovesaid heterojunction type semiconductor photoelectric conversion device, the light-transparent, conductive layer is made of a light-transparent, conductive nitride, which is a conductive metal nitride.