Implemention of linear doping profiles for high voltage thin-film SOI devices

In this paper, a novel approach is proposed to obtain a linear doping profile for the implementation of lateral high voltage devices on thin-film Silicon-On-Insulator (SOI). The linear doping profile is obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide mask with subsequent impurity implantation and drive-in processes. To understand the effect of the location and size of the oxide slits on the final doping profile, an one-dimensional analytical model is developed. Moreover, a computer program has also been developed to facilitate the slit parameters optimization. Validity of the model and the program has been verified by performing extensive two-dimensional process and device simulations.

[1]  U. Gosele,et al.  Variation of lateral doping—A new concept to avoid high voltage breakdown of planar junctions , 1985, 1985 International Electron Devices Meeting.

[2]  M. Haond.  Lateral isolation in SOI CMOS technology , 1990, 1990 IEEE SOS/SOI Technology Conference. Proceedings.

[3]  Satyendranath Mukherjee,et al.  Comparison of junction-isolated and soi high-voltage devices operating in the source-follower mode , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.

[4]  Theodore Letavic,et al.  Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors , 1993, [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.

[5]  J. Colinge.  Silicon-on-Insulator Technology: Materials to VLSI , 1991 .

[6]  J. Colinge.  Silicon-on-Insulator Technology , 1991 .

[7]  J. Colinge.  Reduction of floating substrate effect in thin-film SOI MOSFETs , 1986 .

[8]  S. Mukherjee,et al.  Realization of high breakdown voltage (>700 V) in thin SOI devices , 1991, [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.

[9]  John Crank,et al.  The Mathematics Of Diffusion , 1956 .

[10]  W. Wondrak,et al.  A new concept for high-voltage SOI devices , 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.